By Institute of Electrical and Electronics Engineers
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Extra info for 2007 2nd International Workshop on Advances in Sensors and Interface
In Fig. 6, we show the drain current Id as a function of source-to-drain voltage Vds for transistors with different channel lengths at room temperature. 6 Drain current as a function of source-to-drain voltage for different channel lengths. The characterization was taken at room temperature and high density of charge carriers (Vg = −40 V, well beyond threshold voltages of each channel). For observation of the scaling behavior, the W/L ratios of all channels were kept at the same value of 10 in fabrication to exclude geometric factors.
14 The DC characteristics of sub-10-nm pentacene FETs. (a) The DC I–V measurement of the device in Fig. 13b, with the side guards biased at the same potential as the drain. (b) The DC I–V measurement of a 19 nm channel device with the side guards biased; Ids /I increases with increasing |Vg|. (c) ln(Ids/Vds) vs. 1/|Vds| plot of the data in (a). (d) ln(Ids/Vds) vs. 1/|Vds| plot of the data in (b). (Reprinted with permission from Ref. 40. ) Scaling Effects in Organic Transistors and Transistor-Based Chemical Sensors higher than the operating drain voltage (Vds, up to −5 V), which causes the FET to operate in the linear region.
It is very important that the contacts do not influence the measured mobility. For each channel length, as the source-drain voltage magnitude is increased from zero, the devices are initially injection-limited. In this regime, the drain current increases exponentially with voltage, as is expected when charge is injected over a Schottky barrier. In Fig. 6 it can be clearly seen that at small Vds, there is an exponential dependence of Id on Vds (injection-limited regime). As the source-drain voltage is increased, the devices are operated away from the injection-limited regime.
2007 2nd International Workshop on Advances in Sensors and Interface by Institute of Electrical and Electronics Engineers