Advanced Gate Stacks for High-Mobility Semiconductors by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc PDF

By Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns

ISBN-10: 3540714901

ISBN-13: 9783540714903

This publication presents a entire monograph on gate stacks in semiconductor expertise. It covers the foremost most recent advancements and fundamentals and may be worthwhile as a reference paintings for researchers, engineers and graduate scholars alike. The reader gets a transparent view of what has been performed to date, what's the cutting-edge and that are the most demanding situations forward earlier than we come any towards a manageable Ge and III-V MOS know-how.

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Extra resources for Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics)

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K. Tanaka, K. Watanabe, H. Ishino, S. Sugawa, A. Teramoto, M. Hirayama, and T. Ohmi, “A Technology for Reducing Flicker Noise for ULSI Applications,” Jpn. J. Appl. Phys. Vol. 42, No. 4B, pp. 2106–2109, April 2003 17. W. A. Puotinen, “Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology,” RCA Review, Vol. 31, No. 2, pp. 187–206, June 1970 18. Tadahiro Ohmi, Koji Kotani, Akinobu Teramoto, and Masayuki Miyashita, “Dependence of Electron Channel Mobility on Si SiO2 Interface Microroughness”, IEEE Electron Device Letters, Vol.

28 shows a schematic structure of (A) the Si(100) surface terminated by two hydrogens a silicon atom, (B) the Si(100) surface partially terminated by hydrogen after desorption at 380◦ C, and (C) the Si(110) surface terminated by hydrogen. In order to oxidize the surface (A), the oxygen atom must replace the terminating hydrogen atoms on the surface, or oxygen must enter into the back bond of the surface silicon atoms. 0 0 200 400 600 800 wafer temperature [[°C] Fig. 25. 0 0 200 400 600 wafer temperature [°C] [ 800 0 200 400 600 wafer temperature [°C] [ (A) Si(100) 800 (B) Si(110) Fig.

Ohmi 505ЊC 380ЊC :H atom : Si atom Fig. 24. Schematic molecular model of the hydrogen-terminated Si(100) surface 520◦ C [28]. Hydrogen is desorbed from the Si(110) surface only at 530◦ C (shown in Fig. 25). 26 shows the characteristics of the TDS characteristics of (A) Si(100) and (B) Si(110) surfaces just after dilute HF treatment and UPW rinsing and after exposure to air for 2 and 12 h after dilute HF treatment and UPW rinsing. Only the peak from hydrogen desorbed at 530◦ C decreases for the Si(100) surface after exposure to the air for 2 h.

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Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics) by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns


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